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NTGS3441T1 Power MOSFET 1 Amp, 20 Volts
P-Channel TSOP-6
Features http://onsemi.com
* * * *
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available
1 AMPERE 20 VOLTS RDS(on) = 90 mW
P-Channel 1256
Applications
* Power Management in Portable and Battery-Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Thermal Resistance Junction-to-Ambient (Note 3) Total Power Dissipation @ TA = 25C Drain Current - Continuous @ TA = 25C - Pulsed Drain Current (Tp t 10 mS) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes for 10 Seconds Symbol VDSS VGS RqJA Pd ID IDM RqJA Pd ID IDM RqJA Pd ID IDM TJ, Tstg TL Value -20 "8.0 244 0.5 -1.65 -10 128 1.0 -2.35 -14 62.5 2.0 -3.3 -20 -55 to 150 260 Unit V V 3
4 C/W W A A C/W W A A C/W W A A C C TSOP-6 CASE 318G STYLE 1 1 = Device Code = Work Week
MARKING DIAGRAM
PT W
1
PT W
PIN ASSIGNMENT
Drain Drain Source 654
1. Minimum FR-4 or G-10PCB, operating to steady state. 2. Mounted onto a 2 square FR-4 board (1 sq. 2 oz. cu. 0.06 thick single sided), operating to steady state. 3. Mounted onto a 2 square FR-4 board (1 sq. 2 oz. cu. 0.06 thick single sided), t t 5.0 seconds.
1
2
3
Drain Drain Gate
ORDERING INFORMATION
Device NTGS3441T1 NTGS3441T1G Package TSOP-6 Shipping 3000 / Tape & Reel
TSOP-6 3000 / Tape& Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2004
1
April, 2004 - Rev. 4
Publication Order Number: NTGS3441T1/D
NTGS3441T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Notes 4 & 5)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = -10 mA) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -20 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = -20 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = -8.0 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 mAdc) Static Drain-Source On-State Resistance (VGS = -4.5 Vdc, ID = -3.3 Adc) (VGS = -2.5 Vdc, ID = -2.9 Adc) Forward Transconductance (VDS = -10 Vdc, ID = -3.3 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage Diode Forward On-Voltage Reverse Recovery Time (IS = -1.6 Adc, VGS = 0 Vdc) (IS = -3.3 Adc, VGS = 0 Vdc) (IS = -1.6 Adc, dIS/dt = 100 A/ms) VSD VSD trr - - - -0.88 -0.98 30 -1.2 - 60 Vdc Vdc ns (VDS = -10 Vdc, VGS = -4.5 Vdc, ID = -3.3 Adc) (VDD = -20 Vdc, ID = -1.6 Adc, VGS = -4.5 Vdc, Rg = 6.0 W) td(on) tr td(off) tf Qtot Qgs Qgd - - - - - - - 13 23.5 27 24 6.2 1.3 2.5 25 45 50 45 14 - - ns ns ns ns nC nC nC (VDS = -5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 480 265 100 - - - pF pF pF VGS(th) -0.45 RDS(on) - - gFS - 6.8 - 0.069 0.117 0.090 0.135 mhos -1.05 -1.50 W Vdc V(BR)DSS -20 IDSS - - IGSS - IGSS - - 100 - -100 nAdc - - -1.0 -5.0 nAdc - - mAdc Vdc Symbol Min Typ Max Unit
4. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge is mandatory.
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NTGS3441T1
TYPICAL ELECTRICAL CHARACTERISTICS
10 -ID, DRAIN CURRENT (AMPS) TJ = 25C VGS = -2.7 V -ID, DRAIN CURRENT (AMPS) VGS = -2.5 V VGS = -3 V VGS = -3.5 V VGS = -4 V VGS = -4.5 V VGS = -6 V V 20 VDS> = -10 V TJ = 25C TJ = -55C 12 TJ = 100C
8
16
6
4
8
GS = -2 V
2 VGS = -10 V 0 0 0.4 0.8 1.2 1.6 2 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = -1.5 V
4
0 0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
0.4 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID = -3.3 A TJ = 25C 0.3 0.28
Figure 2. Transfer Characteristics
TJ = 25C 0.24 0.2 0.16 0.12 0.08 0.04 0 0 4 8 12 16 20 -ID, DRAIN CURRENT (AMPS) VGS = -4.5 V VGS = -2.5 V
0.2
0.1
0 2 3 4 5 6 7 8 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
100
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.4
ID = -3.3 A VGS = -4.5 V -IDSS, LEAKAGE (nA) 10
VGS = 0 V TJ = 125C
1.2
TJ = 100C
1
1
TJ = 25C
0.8
0.6 -50
0.1 -25 0 25 50 75 100 125 150 0 4 8 12 16 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTGS3441T1
TYPICAL ELECTRICAL CHARACTERISTICS
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1200 VDS = 0 V Ciss C, CAPACITANCE (pF) 900 VGS = 0 V TJ = 25C 8
6 QT 4 Qgs 2 Qgd VDD = -20 V ID = -3.3 A TJ = 25C
600
Crss Ciss
300
Coss Crss
0 8 4 -VGS 0 4 -VDS 8 12 16 20
0 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
VGS(th), GATE THRESHOLD VOLTAGE (NORMALIZED) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 -50 ID = -250 mA 10 -IS, SOURCE CURRENT (AMPS)
Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C 8
6
4
2
-25
0
25
50
75
100
125
150
0 0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
TJ, JUNCTION TEMPERATURE (C)
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Gate Threshold Voltage Variation with Temperature
Figure 10. Diode Forward Voltage vs. Current
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NTGS3441T1
TYPICAL ELECTRICAL CHARACTERISTICS
20
16 POWER (W)
12
8
4
0 0.01
0.10
1.00 TIME (sec)
10.00
100.00
Figure 11. Single Pulse Power
NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE
1 Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 0.01 1E-03 Single Pulse 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03
0.01 1E-04
SQUARE WAVE PULSE DURATION (sec)
Figure 12. Normalized Thermal Transient Impedance, Junction-to-Ambient
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NTGS3441T1
PACKAGE DIMENSIONS
TSOP-6 CASE 318G-02 ISSUE L
A L
6 5 1 2 4 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181
S
B
D G M 0.05 (0.002) H C K J
SOLDERING FOOTPRINT*
2.4 0.094
1.9 0.075
0.95 0.037 0.95 0.037
0.7 0.028 1.0 0.039
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTGS3441T1/D

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